Bias Temperature Instability for Devices and Circuits by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

This booklet presents a single-source connection with one of many tougher reliability matters plaguing smooth semiconductor applied sciences, adverse bias temperature instability. Readers will reap the benefits of state-of-the paintings assurance of analysis in subject matters reminiscent of time based disorder spectroscopy, anomalous illness habit, stochastic modeling with extra metastable states, multiphonon concept, compact modeling with RC ladders and implications on gadget reliability and lifetime.

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Chadwin D. Young, Yuegang Zhao, Michael Pendley, Byoung Hun Lee, Kenneth Matthews, Jang HoanSim, Rino Choi, George A. Brown, Robert W. Murto, and GennadiBersuker “Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices”, Jpn. J. Appl. Phys. Vol. 44 pp. 2437–2440, 2005. 31. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken and M. Goodwin, “Disorder-Controlled-Kinetics Model for Negative Bias Temperature Instability and its Experimental Verification”, in Proc.

These operation modes can either be realized using customized circuits on-chip or by using off-chip pulse generator units enabling synchronized switching events. In general, higher frequency testing can be achieved with the on-chip circuits due to reduced parasitic capacitance. For accurate modeling of circuit BTI, large frequency and duty cycle domains need to be explored. 24 A. Kerber and E. Cartier DC stress AC stress INV stress V stress V stress V stress Relaxation Stress Fig. 5 Voltage Ramp Stress Characterization Since the introduction of MG/HK into CMOS process technology, fast reliability screening during process development and reliability monitoring during manufacturing have gained importance as the use of several new materials has resulted in greater process complexity.

Schwalke, “Characterization of the VT -instability in SiO2 / HfO2 gate dielectrics”, in Proc. IRPS, pp. 41–45, 2003. 20. H. Reisinger, O. Blank, W. Heinrigs, A. M¨uhlhoff, W. Gustin, and C. Schl¨under, “Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT -measurements,” in Proc. IRPS, pp. 448–453, 2006. 21. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez2, R. O’Connor, B. J. O’Sullivan, G. Groeseneken, “Ubiquitous Relaxation in BTI stressing – New Evaluation and Insights”, inProc.

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