By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)
This booklet presents a single-source connection with one of many tougher reliability matters plaguing smooth semiconductor applied sciences, adverse bias temperature instability. Readers will reap the benefits of state-of-the paintings assurance of analysis in subject matters reminiscent of time based disorder spectroscopy, anomalous illness habit, stochastic modeling with extra metastable states, multiphonon concept, compact modeling with RC ladders and implications on gadget reliability and lifetime.
Read Online or Download Bias Temperature Instability for Devices and Circuits PDF
Similar circuits books
From uncomplicated thermistors to clever silicon microdevices with strong services to speak info throughout networks, sensors play a massive position in such assorted fields as biomedical and chemical engineering to instant communications. Introducing a brand new established count number procedure for frequency sign processing, this ebook offers a realistic method of the layout of sign processing sensors.
Feedback-Based Orthogonal electronic Filters: concept, purposes, andImplementation develops the idea of a feedback-based orthogonal electronic filter out and examines numerous functions the place the clear out topology ends up in an easy and effective resolution. the improvement of the clear out constitution is associated with innovations in observer idea.
Analog basics: A structures procedure presents specific insurance of analog units and circuits with a platforms emphasis. Discrete linear units, operational amplifiers, and different linear built-in circuits, are all lined with much less emphasis at the person gadget, and extra dialogue on how those units are integrated into higher circuits and structures.
Extra info for Bias Temperature Instability for Devices and Circuits
Chadwin D. Young, Yuegang Zhao, Michael Pendley, Byoung Hun Lee, Kenneth Matthews, Jang HoanSim, Rino Choi, George A. Brown, Robert W. Murto, and GennadiBersuker “Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices”, Jpn. J. Appl. Phys. Vol. 44 pp. 2437–2440, 2005. 31. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken and M. Goodwin, “Disorder-Controlled-Kinetics Model for Negative Bias Temperature Instability and its Experimental Verification”, in Proc.
These operation modes can either be realized using customized circuits on-chip or by using off-chip pulse generator units enabling synchronized switching events. In general, higher frequency testing can be achieved with the on-chip circuits due to reduced parasitic capacitance. For accurate modeling of circuit BTI, large frequency and duty cycle domains need to be explored. 24 A. Kerber and E. Cartier DC stress AC stress INV stress V stress V stress V stress Relaxation Stress Fig. 5 Voltage Ramp Stress Characterization Since the introduction of MG/HK into CMOS process technology, fast reliability screening during process development and reliability monitoring during manufacturing have gained importance as the use of several new materials has resulted in greater process complexity.
Schwalke, “Characterization of the VT -instability in SiO2 / HfO2 gate dielectrics”, in Proc. IRPS, pp. 41–45, 2003. 20. H. Reisinger, O. Blank, W. Heinrigs, A. M¨uhlhoff, W. Gustin, and C. Schl¨under, “Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT -measurements,” in Proc. IRPS, pp. 448–453, 2006. 21. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez2, R. O’Connor, B. J. O’Sullivan, G. Groeseneken, “Ubiquitous Relaxation in BTI stressing – New Evaluation and Insights”, inProc.